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| 产品描述：
N-Channel 55 V 8.5 mOhm Surface Mount STripFET Power MosFet - TO-252
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| 标准包装：1 | ||
| 数据手册： |
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| Qg - Gate Charge: | 33.5 nC |
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| Packaging: | Reel |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Configuration: | Single |
| Unit Weight: | 0.139332 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 20 ns |
| Forward Transconductance - Min: | 50 S |
| Series: | N-channel STripFET |
| Factory Pack Quantity: | 2500 |
| Brand: | STMicroelectronics |
| RoHS: | Details |
| Id - Continuous Drain Current: | 80 A |
| Rise Time: | 50 ns |
| Maximum Operating Temperature: | + 175 C |
| Rds On - Drain-Source Resistance: | 8.5 mOhms |
| Width: | 6.2 mm |
| Pd - Power Dissipation: | 110 W |
| Package / Case: | TO-252-3 |
| Height: | 2.4 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 11.5 ns |
| Length: | 6.6 mm |
| Manufacturer: | STMicroelectronics |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 35 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| 数据手册： |
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