NTMD3P03R2G
  • 量产中
  • 8-SOIC N
产品描述:
Dual P-Channel 30 V 85 mΩ 0.73 W Surface Mount Power MOSFET - SOIC-8
标准包装:1
数据手册:
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
FET Feature Logic Level Gate
Package / Case 8-SOIC (0.154", 3.90mm Width)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.34A
PCN Design/Specification Multiple Devices Copper Wire 20/Aug/2008
Online Catalog P-Channel Logic Level Gate FETs
Mounting Type Surface Mount
Input Capacitance (Ciss) @ Vds 750pF @ 24V
RoHS Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs 85 mOhm @ 3.05A, 10V
Power - Max 730mW
Supplier Device Package 8-SOIC N
Gate Charge (Qg) @ Vgs 25nC @ 10V
FET Type 2 P-Channel (Dual)
Family FETs - Arrays
Vgs(th) (Max) @ Id 2.5V @ 250µA
Packaging Cut Tape (CT)  
数据手册:
登录之后就可发表评论

请输入下方图片中的验证码:

验证码