NTMD3P03R2G | ||
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产品描述:
Dual P-Channel 30 V 85 mΩ 0.73 W Surface Mount Power MOSFET - SOIC-8
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标准包装:1 | ||
数据手册: |
FET Feature | Logic Level Gate |
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Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 2.34A |
PCN Design/Specification | Multiple Devices Copper Wire 20/Aug/2008 |
Online Catalog | P-Channel Logic Level Gate FETs |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) @ Vds | 750pF @ 24V |
RoHS | Lead free / RoHS Compliant |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 3.05A, 10V |
Power - Max | 730mW |
Supplier Device Package | 8-SOIC N |
Gate Charge (Qg) @ Vgs | 25nC @ 10V |
FET Type | 2 P-Channel (Dual) |
Family | FETs - Arrays |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Packaging | Cut Tape (CT) |
数据手册: |
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