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| 产品描述：
Single P-Channel 30 V 65 mOhm 6.9 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
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| 标准包装：1 | ||
| 数据手册： |
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| FET Feature | Logic Level Gate |
|---|---|
| Package / Case | 6-VQFN |
| Power - Max | 2.1W |
| Supplier Device Package | 6-PQFN (2x2) |
| Gate Charge (Qg) @ Vgs | 13nC @ 10V |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Series | HEXFET® |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 580pF @ 25V |
| RoHS | Lead free / RoHS Compliant |
| Rds On (Max) @ Id, Vgs | 37 mOhm @ 7.8A, 10V |
| PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta), 13A (Tc) |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below |
| Design Resources | IRFHS9301TR2PBF Saber Model IRFHS9301TR2PBF Spice Model |
| Family | FETs - Single |
| Vgs(th) (Max) @ Id | 2.4V @ 25µA |
| Packaging | Tape & Reel (TR) |
| ECCN | EAR99 |
| 数据手册： |
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