DMN2300UFB4-7B specifications -Ameya360 electronic components purchase network


DMN2300UFB4-7B

ACTIVE 3-DFN1006H4 (1.0x0.6)
Product description : N-Channel 20 V 175 mOhm 1.6 nC Enhancement Mosfet - DFN-1006-3
SPQ：1
Datasheet : DMN2300UFB4-7B.pdf

FET Feature	Logic Level Gate
Package / Case	3-XFDFN
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1.3A (Ta)
FET Type	MOSFET N-Channel, Metal Oxide
Family	FETs - Single
Vgs(th) (Max) @ Id	950mV @ 250µA
Input Capacitance (Ciss) @ Vds	64.3pF @ 25V
RoHS	Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs	175 mOhm @ 300mA, 4.5V
Power - Max	470mW
Supplier Device Package	3-DFN1006H4 (1.0x0.6)
Gate Charge (Qg) @ Vgs	1.6nC @ 4.5V
Online Catalog	N-Channel Logic Level Gate FETs
Mounting Type	Surface Mount
RoHS Information	RoHS Cert of Compliance
Packaging	Cut Tape (CT)

Datasheet： DMN2300UFB4-7B.pdf

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Stock code :	13829
Mfg name :	Diodes Incorporated
MPN :	DMN2300UFB4-7B
Product description :	N-Channel 20 V 175 mOhm 1.6 nC Enhancement Mosfet - DFN-1006-3

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