IRF3315PBF
  • 量产中
  • EAR99
产品描述:
Transistor: N-MOSFET; unipolar; 150V; 21A; 94W; TO220AB
标准包装:3000
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Qg - Gate Charge: 63.3 nC
Packaging: Tube
Manufacturer: Infineon
Transistor Polarity: N-Channel
Technology: Si
RoHS:  Details
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 150 V
Unit Weight: 0.211644 oz
Mounting Style: Through Hole
Rds On - Drain-Source Resistance: 70 mOhms
Number of Channels: 1 Channel
Pd - Power Dissipation: 94 W
Factory Pack Quantity: 50
Brand: Infineon Technologies
Package / Case: TO-220-3
Id - Continuous Drain Current: 21 A
Vgs - Gate-Source Voltage: 20 V
Transistor Type: 1 N-Channel
ECCN EAR99
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