| IRLR8259TRPBF | ||
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| 产品描述：
IRLR8259 Series 25 V 8.7 mOhm 6.8 nC Surface Mount HEXFET Power MOSFET - DPAK-3
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| 标准包装：1 | ||
| 数据手册： |
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| Minimum Operating Temperature: | - 55 C |
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| Rds On - Drain-Source Resistance: | 10.6 mOhms |
| Pd - Power Dissipation: | 48 W |
| Package / Case: | TO-252-3 |
| Configuration: | Single |
| Unit Weight: | 0.139332 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 8.4 ns |
| Manufacturer: | Infineon |
| Factory Pack Quantity: | 2000 |
| Typical Turn-Off Delay Time: | 9.1 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 25 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Qg - Gate Charge: | 6.8 nC |
| Packaging: | Reel |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 1.9 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 8.9 ns |
| Forward Transconductance - Min: | 55 S |
| Transistor Polarity: | N-Channel |
| Brand: | Infineon Technologies |
| RoHS: | Details |
| Id - Continuous Drain Current: | 57 A |
| Rise Time: | 38 ns |
| Maximum Operating Temperature: | + 175 C |
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