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| 产品描述：
Single P-Channel 20 V 0.375 Ohm 8.8 nC HEXFET® Power Mosfet - MICRO-6
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| 标准包装：3000 | ||
| 数据手册： |
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| Power - Max | 1.7W |
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| Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.6A, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-23-6 |
| FET Feature | Standard |
| Supplier Device Package | Micro6™(TSOP-6) |
| Gate Charge (Qg) @ Vgs | 8.8nC @ 4.5V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 210pF @ 15V |
| ECCN | EAR99 |
| 数据手册： |
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