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| 产品描述：
Dual N/P-Channel 20 V 0.2/0.4 Ohm 8/8.2 nC HEXFET® Power Mosfet - MICRO-8
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| 数据手册： |
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| Qg - Gate Charge: | 5.3 nC |
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| Packaging: | Reel |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel, P-Channel |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 20 V, - 20 V |
| Vgs - Gate-Source Voltage: | 12 V |
| Mounting Style: | SMD/SMT |
| Rds On - Drain-Source Resistance: | 135 mOhms, 270 mOhms |
| Number of Channels: | 2 Channel |
| Pd - Power Dissipation: | 1.25 W |
| Factory Pack Quantity: | 4000 |
| Brand: | Infineon Technologies |
| Package / Case: | Micro-8 |
| Id - Continuous Drain Current: | 2.4 A, - 1.7 A |
| Configuration: | 1 N-Channel, 1 P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| ECCN | EAR99 |
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