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| 产品描述：
Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
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| 标准包装：1 | ||
| 数据手册： |
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| Rds On - Drain-Source Resistance: | 16.5 mOhms |
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| Packaging: | Tube |
| Number of Channels: | 1 Channel |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | MOSFET |
| Height: | 4.83 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Length: | 10.67 mm |
| Width: | 9.65 mm |
| Qg - Gate Charge: | 48 nC |
| Pd - Power Dissipation: | 120 W |
| Factory Pack Quantity: | 50 |
| Brand: | Infineon Technologies |
| Package / Case: | TO-252-3 |
| Id - Continuous Drain Current: | 53 A |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Unit Weight: | 0.139332 oz |
| Mounting Style: | SMD/SMT |
| 数据手册： |
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