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| 产品描述：
Single N-Channel 100 V 22 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8
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| 数据手册： |
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| Qg - Gate Charge: | 34 nC |
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| Packaging: | Reel |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Unit Weight: | 0.019048 oz |
| Mounting Style: | SMD/SMT |
| Rds On - Drain-Source Resistance: | 22 mOhms |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 2.5 W |
| Factory Pack Quantity: | 4000 |
| Brand: | Infineon Technologies |
| Package / Case: | SOIC-8 |
| Id - Continuous Drain Current: | 7.3 A |
| Vgs - Gate-Source Voltage: | 20 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| 数据手册： |
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