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| 产品描述：
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
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| 标准包装：1 | ||
| 数据手册： |
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| Power - Max | 2.5W |
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| Rds On (Max) @ Id, Vgs | 60 mOhm @ 2.7A, 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Part Status | Active |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| FET Feature | Standard |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) @ Vgs | 50nC @ 10V |
| Category | Discrete Semiconductor Products |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | Transistors - FETs, MOSFETs - Single |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) @ Vds | 930pF @ 25V |
| ECCN | EAR99 |
| 数据手册： |
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