IPD031N06L3 G specifications -Ameya360 electronic components purchase network


IPD031N06L3 G

ACTIVE PG-TO252-3
Product description : MOSFET N-CH 60V 100A TO252-3
SPQ：2500
Datasheet : IPD031N06L3 G.pdf

FET Feature	Logic Level Gate
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
FET Type	MOSFET N-Channel, Metal Oxide
Series	OptiMOS™
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	13000pF @ 30V
RoHS	Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs	3.1 mOhm @ 100A, 10V
Power - Max	167W
Supplier Device Package	PG-TO252-3
Gate Charge (Qg) @ Vgs	79nC @ 4.5V
Online Catalog	N-Channel Logic Level Gate FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	2.2V @ 93µA
Packaging	Digi-Reel®

Datasheet： IPD031N06L3 G.pdf

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