AUIRFR4105Z
AUIRFR4105Z
  • ACTIVE
  • EAR99
Product description : Single N-Channel 55 V 24.5 mOhm 27 nC Automotive HEXFET® Power Mosfet - DPAK
SPQ:75
Datasheet :
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Qg - Gate Charge: 18 nC
Packaging: Tube
Minimum Operating Temperature: - 55 C
Technology: Si
Height: 2.39 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 24 ns
Length: 6.73 mm
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 26 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 55 V
Transistor Type: 1 N-Channel
Rds On - Drain-Source Resistance: 24.5 mOhms
Width: 6.22 mm
Pd - Power Dissipation: 48 W
Package / Case: TO-252-3
Configuration: Single
Unit Weight: 0.139332 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 10 ns
Manufacturer: Infineon
Factory Pack Quantity: 75
Brand: Infineon Technologies
RoHS:  Details
Id - Continuous Drain Current: 30 A
Rise Time: 40 ns
ECCN EAR99
Datasheet:
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Supplier Code:SP1027

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$2.97879

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stock6Update On
2022-12-01
Lead-Time0Weeks
Supplier SPQ/MOQ75/1
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DateCode1804

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