IRFB812PBF specifications -Ameya360 electronic components purchase network


IRFB812PBF

ACTIVE EAR99
Product description : Single N-Channel 500 V 2.2 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3
SPQ：1
Datasheet : IRFB812PBF.pdf

Qg - Gate Charge:	13.3 nC
Packaging:	Tube
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	500 V
Vgs - Gate-Source Voltage:	20 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Rds On - Drain-Source Resistance:	1.75 Ohms
Number of Channels:	1 Channel
Pd - Power Dissipation:	78 W
Factory Pack Quantity:	50
Brand:	Infineon Technologies
Package / Case:	TO-220-3
Id - Continuous Drain Current:	3.6 A
Configuration:	Single
Unit Weight:	0.211644 oz
Mounting Style:	Through Hole

Datasheet： IRFB812PBF.pdf

You can comment after logging in.

Please inform us of the error for improving our site and products.

Stock code :	110664
Mfg name :	Infineon Technologies
MPN :	IRFB812PBF
Product description :	Single N-Channel 500 V 2.2 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3

Type of Error

	Product description/Specifications
	Image
	Data sheet
	Search
	Associated/Alternative Product
	Prices
	Other

Explanation (Character Limit: 500)

Name:

Email(We may contact you about this problem.)

placeholder

PART	Quantity*	Target Price
	Quantity MOQ:	Target Price $ If not sure, you may skip this
remark

placeholder

PART	Quantity*	Target Price	Expected LeadTime
	Quantity	Target Price $ If not sure, you may skip this	Expected LeadTime If not sure, you may skip this
remark

Please enter the verification code in the image below：