| SI1967DH-T1-GE3 | ||
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| Product description : Dual P-Channel 20 V 490 mOhm Surface Mount TrenchFET Power Mosfet - SC-70-6 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
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| Qg - Gate Charge: | 2.6 nC |
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| Packaging: | Reel |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | SC-70-6 |
| Vgs - Gate-Source Voltage: | 8 V |
| Mounting Style: | SMD/SMT |
| Forward Transconductance - Min: | 2 S |
| Series: | SI1 |
| Factory Pack Quantity: | 3000 |
| Part # Aliases: | SI1903DL-T1-GE3 |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 20 V |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 490 mOhms |
| Product: | MOSFET Small Signal |
| Pd - Power Dissipation: | 1.25 W |
| Tradename: | TrenchFET |
| Configuration: | Dual |
| Unit Weight: | 0.000988 oz |
| Number of Channels: | 2 Channel |
| Manufacturer: | Vishay |
| Transistor Polarity: | P-Channel |
| Brand: | Vishay Semiconductors |
| RoHS: | Details |
| Id - Continuous Drain Current: | 1.3 A |
| Transistor Type: | 2 P-Channel |
| ECCN | EAR99 |
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