BSC027N04LSGATMA1
  • 量产中
  • EAR99
产品描述:
Single N-Channel 40 V 2.7 mOhm 64 nC OptiMOS™ Power Mosfet - TDSON-8
标准包装:5000
数据手册: --
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Width: 6.35 mm
Rds On - Drain-Source Resistance: 2.3 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TDSON-8
Height: 1.1 mm
Vgs - Gate-Source Voltage: +/- 20 V
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 9.8 ns
Forward Transconductance - Min: 70 S
Series: BSC027N04
Factory Pack Quantity: 5000
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 39 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 40 V
Transistor Type: 1 N-Channel
ECCN EAR99
Packaging: Reel
Qg - Gate Charge: 85 nC
Pd - Power Dissipation: 83 W
Tradename: OptiMOS
Vgs th - Gate-Source Threshold Voltage: 1.2 V
Configuration: 1 N-Channel
Mounting Style: SMD/SMT
Fall Time: 6.2 ns
Length: 6.35 mm
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: BSC027N04LS BSC027N04LSGXT G SP000354810
RoHS:  Details
Id - Continuous Drain Current: 100 A
Rise Time: 5.6 ns
Maximum Operating Temperature: + 150 C
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