BSC027N04LSGATMA1 | ||
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产品描述:
Single N-Channel 40 V 2.7 mOhm 64 nC OptiMOS™ Power Mosfet - TDSON-8
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标准包装:5000 | ||
数据手册: -- |
Width: | 6.35 mm |
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Rds On - Drain-Source Resistance: | 2.3 mOhms |
Minimum Operating Temperature: | - 55 C |
Technology: | Si |
Package / Case: | TDSON-8 |
Height: | 1.1 mm |
Vgs - Gate-Source Voltage: | +/- 20 V |
Number of Channels: | 1 Channel |
Typical Turn-On Delay Time: | 9.8 ns |
Forward Transconductance - Min: | 70 S |
Series: | BSC027N04 |
Factory Pack Quantity: | 5000 |
Brand: | Infineon Technologies |
Typical Turn-Off Delay Time: | 39 ns |
Product Category: | MOSFET |
Vds - Drain-Source Breakdown Voltage: | 40 V |
Transistor Type: | 1 N-Channel |
ECCN | EAR99 |
Packaging: | Reel |
Qg - Gate Charge: | 85 nC |
Pd - Power Dissipation: | 83 W |
Tradename: | OptiMOS |
Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
Configuration: | 1 N-Channel |
Mounting Style: | SMD/SMT |
Fall Time: | 6.2 ns |
Length: | 6.35 mm |
Manufacturer: | Infineon |
Transistor Polarity: | N-Channel |
Channel Mode: | Enhancement |
Part # Aliases: | BSC027N04LS BSC027N04LSGXT G SP000354810 |
RoHS: | Details |
Id - Continuous Drain Current: | 100 A |
Rise Time: | 5.6 ns |
Maximum Operating Temperature: | + 150 C |