NSS40300MDR2G specifications -Ameya360 electronic components purchase network


NSS40300MDR2G

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Product description : Dual Matched 40 V, 6.0 A, Low Vce(sat) PNP Transistor
SPQ：2500
Datasheet : NSS40300MDR2G.pdf

Minimum Operating Temperature:	- 55 C
Collector- Base Voltage VCBO:	40 V
Pd - Power Dissipation:	783 mW
Height:	1.5 mm
Configuration:	Dual
Unit Weight:	0.005044 oz
Maximum DC Collector Current:	3 A
Length:	5 mm
Manufacturer:	ON Semiconductor
Transistor Polarity:	PNP
Brand:	ON Semiconductor
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Packaging:	Reel
Width:	4 mm
Package / Case:	SOIC-8 Narrow
Gain Bandwidth Product fT:	100 MHz
Mounting Style:	SMD/SMT
Emitter- Base Voltage VEBO:	7 V
DC Current Gain hFE Max:	250 at 10 mA at 2 V
DC Collector/Base Gain hfe Min:	250 at 10 mA at 2 V, 220 at 500 mA at 2 V, 180 at 1 A at 2 V, 150 at 2 A at 2 V
Series:	NSS40300MD
Factory Pack Quantity:	2500
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	40 V

Datasheet： NSS40300MDR2G.pdf

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Stock code :	97811
Mfg name :	onsemi
MPN :	NSS40300MDR2G
Product description :	Dual Matched 40 V, 6.0 A, Low Vce(sat) PNP Transistor

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