| SI4925BDY-T1-E3 | ||
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| 产品描述：
Dual P-Channel 30 V 0.025 Ohms Surface Mount Power Mosfet - SOIC-8
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| 标准包装：1 | ||
| 数据手册： |
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| Minimum Operating Temperature: | - 55 C |
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| Packaging: | Reel |
| Pd - Power Dissipation: | 1.1 W |
| Tradename: | TrenchFET |
| Height: | 1.55 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 34 ns |
| Length: | 5 mm |
| Series: | SI4 |
| Factory Pack Quantity: | 2500 |
| Brand: | Vishay Semiconductors |
| Typical Turn-Off Delay Time: | 60 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 30 V |
| Transistor Type: | 2 P-Channel |
| ECCN | EAR99 |
| Rds On - Drain-Source Resistance: | 25 mOhms |
| Width: | 4 mm |
| Technology: | Si |
| Package / Case: | SOIC-8 |
| Configuration: | Dual |
| Unit Weight: | 0.006596 oz |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 9 ns |
| Manufacturer: | Vishay |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | SI4925BDY-T1 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 5.3 A |
| Rise Time: | 12 ns |
| Maximum Operating Temperature: | + 150 C |
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