BSC123N08NS3GATMA1
BSC123N08NS3GATMA1
  • ACTIVE
  • EAR99
Product description : Single N-Channel 80 V 24 mOhm 25 nC OptiMOS™ Power Mosfet - TDSON-8
SPQ:1
Datasheet : --
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Width: 6.35 mm
Rds On - Drain-Source Resistance: 12.3 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Package / Case: TDSON-8
Height: 1.1 mm
Vgs - Gate-Source Voltage: +/- 20 V
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 12 ns
Forward Transconductance - Min: 44 S
Series: BSC123N08
Factory Pack Quantity: 5000
Brand: Infineon Technologies
Typical Turn-Off Delay Time: 19 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 80 V
Transistor Type: 1 N-Channel
ECCN EAR99
Packaging: Reel
Qg - Gate Charge: 19 nC
Pd - Power Dissipation: 66 W
Tradename: OptiMOS
Vgs th - Gate-Source Threshold Voltage: 2.8 V
Configuration: Single
Mounting Style: SMD/SMT
Fall Time: 4 ns
Length: 6.35 mm
Manufacturer: Infineon
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Part # Aliases: BSC123N08NS3 BSC123N08NS3GXT G SP000443916
RoHS:  Details
Id - Continuous Drain Current: 55 A
Rise Time: 18 ns
Maximum Operating Temperature: + 150 C
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Supplier Stock

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

stock102Update On
2025-07-01
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SPQ/MOQ1/1
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Supplier Code:SP1027

Offline Manufacture or Manufacture authorized supplier owned stock and price , need double confirmation and share out from them

$0.97015

8.05772

stock65000Update On
2023-04-24
Lead-Time0Weeks
Supplier SPQ/MOQ1/5000
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DateCode2309

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