IRFS38N20DTRRP specifications -Ameya360 electronic components purchase network


IRFS38N20DTRRP

ACTIVE
Product description : D2PAK 3/200V SINGLE N-CHANNEL HEXFET POWER MOSFET
SPQ：800
Datasheet : IRFS38N20DTRRP.pdf

Width:	9.65 mm
Rds On - Drain-Source Resistance:	54 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	5 V
Configuration:	Single
Unit Weight:	0.139332 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	16 ns
Forward Transconductance - Min:	17 S
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	29 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	200 V
Transistor Type:	1 N-Channel
Packaging:	Reel
Qg - Gate Charge:	60 nC
Pd - Power Dissipation:	3.8 W
Package / Case:	TO-252-3
Height:	4.83 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	SMD/SMT
Fall Time:	47 ns
Length:	10.67 mm
Manufacturer:	Infineon
Factory Pack Quantity:	800
Brand:	Infineon / IR
RoHS:	Details
Id - Continuous Drain Current:	44 A
Rise Time:	95 ns
Maximum Operating Temperature:	+ 175 C

Datasheet： IRFS38N20DTRRP.pdf

You can comment after logging in.

Please inform us of the error for improving our site and products.

Stock code :	945858
Mfg name :	Infineon Technologies
MPN :	IRFS38N20DTRRP
Product description :	D2PAK 3/200V SINGLE N-CHANNEL HEXFET POWER MOSFET

Type of Error

	Product description/Specifications
	Image
	Data sheet
	Search
	Associated/Alternative Product
	Prices
	Other

Explanation (Character Limit: 500)

Name:

Email(We may contact you about this problem.)

placeholder

PART	Quantity*	Target Price
	Quantity MOQ:	Target Price $ If not sure, you may skip this
remark

placeholder

PART	Quantity*	Target Price	Expected LeadTime
	Quantity	Target Price $ If not sure, you may skip this	Expected LeadTime If not sure, you may skip this
remark

Please enter the verification code in the image below：