IRFB4332PBF specifications -Ameya360 electronic components purchase network


IRFB4332PBF

ACTIVE EAR99
Product description : Single N-Channel 250 V 33 mOhm 99 nC HEXFET® Power Mosfet - TO-220-3
SPQ：1
Datasheet : IRFB4332PBF.pdf

Rds On - Drain-Source Resistance:	33 mOhms
Packaging:	Tube
Qg - Gate Charge:	99 nC
Pd - Power Dissipation:	390 W
Transistor Polarity:	N-Channel
Factory Pack Quantity:	50
Brand:	Infineon Technologies
Package / Case:	TO-220-3
Id - Continuous Drain Current:	60 A
Configuration:	Single
Unit Weight:	0.211644 oz
Mounting Style:	Through Hole
ECCN	EAR99
Forward Transconductance - Min:	100 S
Number of Channels:	1 Channel
Manufacturer:	Infineon
Minimum Operating Temperature:	- 40 C
Channel Mode:	Enhancement
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	250 V
Vgs - Gate-Source Voltage:	30 V
Transistor Type:	1 N-Channel
Maximum Operating Temperature:	+ 175 C

Datasheet： IRFB4332PBF.pdf

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Stock code :	94055
Mfg name :	Infineon Technologies
MPN :	IRFB4332PBF
Product description :	Single N-Channel 250 V 33 mOhm 99 nC HEXFET® Power Mosfet - TO-220-3

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