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| 产品描述：
Single N-Channel 250 V 33 mOhm 99 nC HEXFET® Power Mosfet - TO-220-3
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| 标准包装：1 | ||
| 数据手册： |
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| Rds On - Drain-Source Resistance: | 33 mOhms |
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| Packaging: | Tube |
| Qg - Gate Charge: | 99 nC |
| Pd - Power Dissipation: | 390 W |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 50 |
| Brand: | Infineon Technologies |
| Package / Case: | TO-220-3 |
| Id - Continuous Drain Current: | 60 A |
| Configuration: | Single |
| Unit Weight: | 0.211644 oz |
| Mounting Style: | Through Hole |
| ECCN | EAR99 |
| Forward Transconductance - Min: | 100 S |
| Number of Channels: | 1 Channel |
| Manufacturer: | Infineon |
| Minimum Operating Temperature: | - 40 C |
| Channel Mode: | Enhancement |
| Technology: | Si |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs - Gate-Source Voltage: | 30 V |
| Transistor Type: | 1 N-Channel |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
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