DMN3016LFDE-7 specifications -Ameya360 electronic components purchase network


DMN3016LFDE-7

ACTIVE EAR99
Product description : N-Channel 30 V 12 mΩ 25.1 nC SMT Enhancement Mode Mosfet - UDFN2020-6
SPQ：3000
Datasheet : DMN3016LFDE-7.pdf

Product:	Enhancement Mode MOSFET
Packaging:	Reel
Qg - Gate Charge:	25.1 nC
Pd - Power Dissipation:	2.02 W
Package / Case:	UDFN2020-6
Height:	0.6 mm
Vgs - Gate-Source Voltage:	+/- 20 V, +/- 20 V
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	4.8 ns
Manufacturer:	Diodes Incorporated
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	26.1 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	30 V
Type:	Enhancement Mode MOSFET
Maximum Operating Temperature:	+ 150 C
Width:	2 mm
Rds On - Drain-Source Resistance:	16 mOhms
Minimum Operating Temperature:	- 55 C
Technology:	Si
Vgs th - Gate-Source Threshold Voltage:	1.4 V
Configuration:	Single
Mounting Style:	SMD/SMT
Fall Time:	5.6 ns
Length:	2 mm
Series:	DMN3016
Factory Pack Quantity:	3000
Brand:	Diodes Incorporated
RoHS:	Details
Id - Continuous Drain Current:	10 A
Rise Time:	16.5 ns
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： DMN3016LFDE-7.pdf

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Stock code :	932529
Mfg name :	Diodes Incorporated
MPN :	DMN3016LFDE-7
Product description :	N-Channel 30 V 12 mΩ 25.1 nC SMT Enhancement Mode Mosfet - UDFN2020-6

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