HN1B01FDW1T1G specifications -Ameya360 electronic components purchase network


HN1B01FDW1T1G

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Product description : Complementary Dual General Purpose Amplifier Transistor
SPQ：1
Datasheet : HN1B01FDW1T1G.pdf

Width:	1.5 mm
Emitter- Base Voltage VEBO:	7 V
Packaging:	Reel
Continuous Collector Current:	0.2 A
DC Collector/Base Gain hfe Min:	200
Series:	HN1B01FDW1
Minimum Operating Temperature:	- 55 C
Factory Pack Quantity:	3000
RoHS:	Details
Product Category:	Bipolar Transistors - BJT
Height:	0.94 mm
Mounting Style:	SMD/SMT
Collector-Emitter Saturation Voltage:	- 0.15 V
Maximum DC Collector Current:	0.2 A
Collector- Base Voltage VCBO:	60 V
Length:	3 mm
Manufacturer:	ON Semiconductor
Pd - Power Dissipation:	380 mW
Transistor Polarity:	NPN, PNP
Brand:	ON Semiconductor
Package / Case:	SC-74-6
Collector- Emitter Voltage VCEO Max:	50 V
Configuration:	Dual
Maximum Operating Temperature:	+ 150 C

Datasheet： HN1B01FDW1T1G.pdf

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Stock code :	93146
Mfg name :	onsemi
MPN :	HN1B01FDW1T1G
Product description :	Complementary Dual General Purpose Amplifier Transistor

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