FQPF9N50CF specifications -Ameya360 electronic components purchase network


FQPF9N50CF

ACTIVE EAR99
Product description : Single N-Channel 500 V 44 W 35 nC DMOS Through Hole Mosfet - TO-220F-3
SPQ：1
Datasheet : FQPF9N50CF.pdf

Width:	4.7 mm
Rds On - Drain-Source Resistance:	850 mOhms
Pd - Power Dissipation:	44 W
Package / Case:	TO-220-3
Configuration:	Single
Unit Weight:	0.080072 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	18 ns
Forward Transconductance - Min:	6.5 S
Series:	QFET
Factory Pack Quantity:	1000
Brand:	Fairchild Semiconductor
RoHS:	Details
Id - Continuous Drain Current:	9 A
Rise Time:	65 ns
Transistor Type:	1 N-Channel
ECCN	EAR99
Packaging:	Bulk
Minimum Operating Temperature:	- 55 C
Technology:	Si
Height:	9.19 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	Through Hole
Fall Time:	64 ns
Length:	10.16 mm
Manufacturer:	Fairchild Semiconductor
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	93 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	500 V
Type:	MOSFET
Maximum Operating Temperature:	+ 150 C

Datasheet： FQPF9N50CF.pdf

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Stock code :	925281
Mfg name :	onsemi
MPN :	FQPF9N50CF
Product description :	Single N-Channel 500 V 44 W 35 nC DMOS Through Hole Mosfet - TO-220F-3

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