STP18NM80
  • 量产中
  • TO-220AB
  • EAR99
产品描述:
Transistor: N-MOSFET; unipolar; 800V; 10.71A; 190W; TO220-3
标准包装:1
数据手册: --
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
Power - Max 190W
Rds On (Max) @ Id, Vgs 295 mOhm @ 8.5A, 10V
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Part Status Active
Manufacturer STMicroelectronics
Series MDmesh™
Vgs(th) (Max) @ Id 5V @ 250µA
Operating Temperature 150°C (TJ)
Packaging Tube
Package / Case TO-220-3
FET Feature Standard
Supplier Device Package TO-220AB
Gate Charge (Qg) @ Vgs 70nC @ 10V
Category Discrete Semiconductor Products
FET Type MOSFET N-Channel, Metal Oxide
Family Transistors - FETs, MOSFETs - Single
Mounting Type Through Hole
Input Capacitance (Ciss) @ Vds 2070pF @ 50V
ECCN EAR99
登录之后就可发表评论

请输入下方图片中的验证码:

验证码