IXGR32N170AH1 specifications -Ameya360 electronic components purchase network


IXGR32N170AH1

ACTIVE EAR99
Product description : IXGR32N170AH1 Series 1700 V 26 A High Voltage IGBT with Diode - ISOPLUS-247
SPQ：30
Datasheet : IXGR32N170AH1.pdf

Collector-Emitter Saturation Voltage:	4.2 V
Packaging:	Tube
Minimum Operating Temperature:	- 55 C
Pd - Power Dissipation:	200 W
Package / Case:	ISOPLUS247-3
Configuration:	Single
Unit Weight:	0.186952 oz
Length:	16.13 mm
Manufacturer:	IXYS
Factory Pack Quantity:	30
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	1.7 kV
Maximum Operating Temperature:	+ 150 C
Width:	5.21 mm
Continuous Collector Current at 25 C:	26 A
Operating Temperature Range:	- 55 C to + 150 C
Gate-Emitter Leakage Current:	100 nA
Height:	21.34 mm
Mounting Style:	Through Hole
Continuous Collector Current Ic Max:	200 A
Continuous Collector Current:	26 A
Series:	IXGR32N170
Brand:	IXYS
Product Category:	IGBT Transistors
Maximum Gate Emitter Voltage:	+/- 20 V
ECCN	EAR99

Datasheet： IXGR32N170AH1.pdf

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Stock code :	903095
Mfg name :	IXYS Corporation
MPN :	IXGR32N170AH1
Product description :	IXGR32N170AH1 Series 1700 V 26 A High Voltage IGBT with Diode - ISOPLUS-247

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