IXTP4N80P specifications -Ameya360 electronic components purchase network


IXTP4N80P

ACTIVE EAR99
Product description : Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W
SPQ：1
Datasheet : IXTP4N80P.pdf

Width:	4.82 mm
Rds On - Drain-Source Resistance:	3 Ohms
Pd - Power Dissipation:	100 W
Package / Case:	TO-220-3
Configuration:	Single
Unit Weight:	0.081130 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	22 ns
Manufacturer:	IXYS
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	60 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	800 V
Transistor Type:	1 N-Channel
ECCN	EAR99
Packaging:	Tube
Minimum Operating Temperature:	- 55 C
Technology:	Si
Height:	9.15 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	Through Hole
Fall Time:	29 ns
Length:	10.66 mm
Series:	IXTP4N80
Factory Pack Quantity:	50
Brand:	IXYS
RoHS:	Details
Id - Continuous Drain Current:	3.5 A
Rise Time:	24 ns
Maximum Operating Temperature:	+ 150 C

Datasheet： IXTP4N80P.pdf

You can comment after logging in.

Out of stock, Please InquiryRFQ

Please inform us of the error for improving our site and products.

Stock code :	877174
Mfg name :	IXYS Corporation
MPN :	IXTP4N80P
Product description :	Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 3.6A; Idm: 8A; 100W

Type of Error

	Product description/Specifications
	Image
	Data sheet
	Search
	Associated/Alternative Product
	Prices
	Other

Explanation (Character Limit: 500)

Name:

Email(We may contact you about this problem.)

placeholder

PART	Quantity*	Target Price
	Quantity MOQ:	Target Price $ If not sure, you may skip this
remark

placeholder

PART	Quantity*	Target Price	Expected LeadTime
	Quantity	Target Price $ If not sure, you may skip this	Expected LeadTime If not sure, you may skip this
remark

Please enter the verification code in the image below：