SI3460DDV-T1-GE3 specifications -Ameya360 electronic components purchase network


SI3460DDV-T1-GE3

ACTIVE 6-TSOP
Product description : N-Channel 20 V 0.028 Ohm 2.7 W Surface Mount Power Mosfet - TSOP-6
SPQ：1
Datasheet : SI3460DDV-T1-GE3.pdf

FET Feature	Logic Level Gate
Package / Case	SOT-23-6 Thin, TSOT-23-6
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	7.9A (Tc)
FET Type	MOSFET N-Channel, Metal Oxide
Series	TrenchFET®
Mounting Type	Surface Mount
Input Capacitance (Ciss) @ Vds	666pF @ 10V
RoHS	Lead free / RoHS Compliant
Rds On (Max) @ Id, Vgs	28 mOhm @ 5.1A, 4.5V
Power - Max	2.7W
Supplier Device Package	6-TSOP
Gate Charge (Qg) @ Vgs	18nC @ 8V
Online Catalog	N-Channel Logic Level Gate FETs
Family	FETs - Single
Vgs(th) (Max) @ Id	1V @ 250µA
Packaging	Cut Tape (CT)

Datasheet： SI3460DDV-T1-GE3.pdf

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Stock code :	8607
Mfg name :	Vishay
MPN :	SI3460DDV-T1-GE3
Product description :	N-Channel 20 V 0.028 Ohm 2.7 W Surface Mount Power Mosfet - TSOP-6

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