IXGH32N170A specifications -Ameya360 electronic components purchase network


IXGH32N170A

ACTIVE EAR99
Product description : IXGH32N170A Series 1700 V 32 A Through Hole High Voltage IGBT - TO-247AD
SPQ：30
Datasheet : IXGH32N170A.pdf

Collector-Emitter Saturation Voltage:	4 V
Packaging:	Tube
Minimum Operating Temperature:	- 55 C
Pd - Power Dissipation:	350 W
Package / Case:	TO-247-3
Configuration:	Single
Unit Weight:	0.229281 oz
Length:	16.26 mm
Manufacturer:	IXYS
Factory Pack Quantity:	30
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	1.7 kV
Maximum Operating Temperature:	+ 150 C
Width:	5.3 mm
Continuous Collector Current at 25 C:	32 A
Operating Temperature Range:	- 55 C to + 150 C
Gate-Emitter Leakage Current:	100 nA
Height:	21.46 mm
Mounting Style:	Through Hole
Continuous Collector Current Ic Max:	110 A
Continuous Collector Current:	32 A
Series:	IXGH32N170
Brand:	IXYS
Product Category:	IGBT Transistors
Maximum Gate Emitter Voltage:	+/- 20 V
ECCN	EAR99

Datasheet： IXGH32N170A.pdf

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Stock code :	836597
Mfg name :	IXYS Corporation
MPN :	IXGH32N170A
Product description :	IXGH32N170A Series 1700 V 32 A Through Hole High Voltage IGBT - TO-247AD

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