2N6213 specifications -Ameya360 electronic components purchase network


2N6213

ACTIVE EAR99
Product description : 2N Series 350 V 2 A PNP Through Hole Silicon Power Transistor - TO-66
SPQ：30
Datasheet : 2N6213.pdf

Maximum DC Collector Current:	5 A
Collector-Emitter Saturation Voltage:	2 V
Packaging:	Tube
Continuous Collector Current:	2 A
Manufacturer:	Central Semiconductor
Pd - Power Dissipation:	35 W
Transistor Polarity:	PNP
Technology:	Si
RoHS:	Details
Product Category:	Bipolar Transistors - BJT
Gain Bandwidth Product fT:	20 MHz
Mounting Style:	Through Hole
ECCN	EAR99
Emitter- Base Voltage VEBO:	6 V
DC Current Gain hFE Max:	100 at 1 A at 4 V
Collector- Base Voltage VCBO:	400 V
DC Collector/Base Gain hfe Min:	10 at 1 A at 4 V
Series:	2N6213
Minimum Operating Temperature:	- 65 C
Factory Pack Quantity:	30
Brand:	Central Semiconductor
Package / Case:	TO-66
Collector- Emitter Voltage VCEO Max:	350 V
Configuration:	Single
Maximum Operating Temperature:	+ 200 C

Datasheet： 2N6213.pdf

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Stock code :	828987
Mfg name :	Central Semiconductor
MPN :	2N6213
Product description :	2N Series 350 V 2 A PNP Through Hole Silicon Power Transistor - TO-66

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