FDMS3606S
FDMS3606S
  • ACTIVE
  • ECL99
Product description : FET FDMS3606S DUAL-N FET HIGH-FET 13A
SPQ:1
Datasheet :
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Width: 5 mm
Rds On - Drain-Source Resistance: 7.8 mOhms, 1.9 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 1.1 V, 1.1 V
Configuration: 2 N-Channel
Unit Weight: 0.006032 oz
Number of Channels: 2 Channel
Typical Turn-On Delay Time: 8.2 ns, 15 ns
Forward Transconductance - Min: 61 S, 154 S
Series: PowerTrench
Factory Pack Quantity: 3000
Brand: Fairchild Semiconductor
RoHS:  Details
Id - Continuous Drain Current: 13 A, 27 A
Rise Time: 2.5 ns, 5.5 ns
Maximum Operating Temperature: + 150 C
Packaging: Reel
Qg - Gate Charge: 29 nC, 83 nC
Pd - Power Dissipation: 2.2 W, 2.5 W
Package / Case: Power56-8
Height: 1 mm
Vgs - Gate-Source Voltage: +/- 20 V, +/- 20 V
Mounting Style: SMD/SMT
Fall Time: 2.2 nS, 3.4 nS
Length: 6 mm
Manufacturer: Fairchild Semiconductor
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 20 ns, 36 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 30 V, 30 V
Transistor Type: 2 N-Channel
ECCN ECL99
Datasheet:
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