| IRFB42N20DPBF | ||
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| 产品描述：
Transistor: N-MOSFET; unipolar; 200V; 42.6A; 300W; TO220AB
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| 标准包装：3000 | ||
| 数据手册： |
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| Minimum Operating Temperature: | - 55 C |
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| Rds On - Drain-Source Resistance: | 55 mOhms |
| Pd - Power Dissipation: | 2.4 W |
| Package / Case: | TO-220-3 |
| Configuration: | Single |
| Unit Weight: | 0.211644 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 18 ns |
| Manufacturer: | Infineon |
| Factory Pack Quantity: | 50 |
| Brand: | Infineon Technologies |
| RoHS: | Details |
| Id - Continuous Drain Current: | 44 A |
| Rise Time: | 69 ns |
| Type: | Smps Mosfet |
| ECCN | EAR99 |
| Qg - Gate Charge: | 91 nC |
| Packaging: | Tube |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 5.5 V |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | Through Hole |
| Fall Time: | 32 ns |
| Forward Transconductance - Min: | 21 S |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 29 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Transistor Type: | 1 N-Channel |
| Maximum Operating Temperature: | + 175 C |
| 数据手册： |
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