IRFBC40SPBF
  • ACTIVE
Product description : Transistor: N-MOSFET; unipolar; 600V; 3.9A; Idm: 25A; 130W; D2PAK
SPQ:1
Datasheet : --
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Width: 9.65 mm
Rds On - Drain-Source Resistance: 1.2 Ohms
Pd - Power Dissipation: 3.1 W
Package / Case: TO-252-3
Configuration: Single
Unit Weight: 0.050717 oz
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 13 ns
Manufacturer: Vishay
Factory Pack Quantity: 1000
Brand: Vishay Semiconductors
RoHS:  Details
Id - Continuous Drain Current: 6.2 A
Rise Time: 18 ns
Maximum Operating Temperature: + 150 C
Packaging: Tube
Minimum Operating Temperature: - 55 C
Technology: Si
Height: 4.83 mm
Vgs - Gate-Source Voltage: 20 V
Mounting Style: SMD/SMT
Fall Time: 20 ns
Length: 10.67 mm
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 55 ns
Product Category: MOSFET
Vds - Drain-Source Breakdown Voltage: 600 V
Transistor Type: 1 N-Channel
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