IRF840LCLPBF specifications -Ameya360 electronic components purchase network


IRF840LCLPBF

ACTIVE EAR99
Product description : MOSFET N-CH 500V 8A TO-262
SPQ：50
Datasheet : IRF840LCLPBF.pdf

Width:	4.7 mm
Rds On - Drain-Source Resistance:	850 mOhms
Pd - Power Dissipation:	3.1 W
Package / Case:	TO-262-3
Configuration:	Single
Unit Weight:	0.084199 oz
Number of Channels:	1 Channel
Typical Turn-On Delay Time:	12 ns
Manufacturer:	Vishay
Factory Pack Quantity:	1000
Brand:	Vishay Semiconductors
RoHS:	Details
Id - Continuous Drain Current:	8 A
Rise Time:	25 ns
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Minimum Operating Temperature:	- 55 C
Technology:	Si
Height:	9.65 mm
Vgs - Gate-Source Voltage:	30 V
Mounting Style:	Through Hole
Fall Time:	19 ns
Length:	10.41 mm
Transistor Polarity:	N-Channel
Channel Mode:	Enhancement
Typical Turn-Off Delay Time:	27 ns
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	500 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IRF840LCLPBF.pdf

You can comment after logging in.

Out of stock, Please InquiryRFQ

Please inform us of the error for improving our site and products.

Type of Error

	Product description/Specifications
	Image
	Data sheet
	Search
	Associated/Alternative Product
	Prices
	Other

Explanation (Character Limit: 500)

Name:

Email(We may contact you about this problem.)

placeholder

PART	Quantity*	Target Price
	Quantity MOQ:	Target Price $ If not sure, you may skip this
remark

placeholder

PART	Quantity*	Target Price	Expected LeadTime
	Quantity	Target Price $ If not sure, you may skip this	Expected LeadTime If not sure, you may skip this
remark

Please enter the verification code in the image below：