ZXT13P12DE6TA specifications -Ameya360 electronic components purchase network


ZXT13P12DE6TA

ACTIVE EAR99
Product description : ZXT Series 12 V 4 A PNP Silicon Low Saturation Switching Transistor SOT-23-6
SPQ：1
Datasheet : ZXT13P12DE6TA.pdf

Collector-Emitter Saturation Voltage:	- 150 mV
Collector- Base Voltage VCBO:	- 29 V
Minimum Operating Temperature:	- 55 C
Package / Case:	SOT-23-6
Gain Bandwidth Product fT:	55 MHz
Unit Weight:	0.000529 oz
Emitter- Base Voltage VEBO:	7.5 V
DC Current Gain hFE Max:	300 at 10 mA at 2 V
Length:	3.1 mm
Manufacturer:	Diodes Incorporated
Transistor Polarity:	PNP
Brand:	Diodes Incorporated
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Width:	1.8 mm
Packaging:	Reel
Pd - Power Dissipation:	1.1 W
Height:	1.3 mm
Configuration:	Single
Mounting Style:	SMD/SMT
Maximum DC Collector Current:	4 A
Continuous Collector Current:	- 4 A
DC Collector/Base Gain hfe Min:	300 at 10 mA at 2 V, 300 at 1 A at 2 V, 200 at 4 A at 2 V, 20 at 15 A at 2 V
Series:	ZXT13P12
Factory Pack Quantity:	3000
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	- 12 V
ECCN	EAR99

Datasheet： ZXT13P12DE6TA.pdf

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Stock code :	783017
Mfg name :	Diodes Incorporated
MPN :	ZXT13P12DE6TA
Product description :	ZXT Series 12 V 4 A PNP Silicon Low Saturation Switching Transistor SOT-23-6

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