| ZTX855 | ||
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| 产品描述：
ZTX855 Series NPN 5 A 150 V Silicon Planar Medium Power Transistor - TO-92-3
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| 标准包装：1 | ||
| 数据手册： |
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| Collector-Emitter Saturation Voltage: | 210 mV |
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| Collector- Base Voltage VCBO: | 250 V |
| Minimum Operating Temperature: | - 55 C |
| Package / Case: | TO-92 |
| Gain Bandwidth Product fT: | 90 MHz |
| Unit Weight: | 0.016000 oz |
| Emitter- Base Voltage VEBO: | 6 V |
| DC Current Gain hFE Max: | 100 at 10 mA at 5 V |
| Length: | 4.77 mm |
| Manufacturer: | Diodes Incorporated |
| Transistor Polarity: | NPN |
| Brand: | Diodes Incorporated |
| Product Category: | Bipolar Transistors - BJT |
| Maximum Operating Temperature: | + 150 C |
| Width: | 2.41 mm |
| Packaging: | Reel |
| Pd - Power Dissipation: | 1.2 W |
| Height: | 4.01 mm |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Maximum DC Collector Current: | 4 A |
| Continuous Collector Current: | 4 A |
| DC Collector/Base Gain hfe Min: | 100 at 10 mA at 5 V, 100 at 1 A at 5 V, 35 at 4 A at 5 V |
| Series: | ZTX855 |
| Factory Pack Quantity: | 4000 |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 150 V |
| ECCN | EAR99 |
| 数据手册： |
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