ZTX558 specifications -Ameya360 electronic components purchase network


ZTX558

ACTIVE ECL99
Product description : ZTX558 Series PNP 200 mA 400 V Silicon Planar Medium Power Transistor - TO-92-3
SPQ：1
Datasheet : ZTX558.pdf

Collector-Emitter Saturation Voltage:	- 0.5 V
Collector- Base Voltage VCBO:	- 400 V
Minimum Operating Temperature:	- 55 C
Package / Case:	TO-92
Gain Bandwidth Product fT:	50 MHz
Unit Weight:	0.016000 oz
Emitter- Base Voltage VEBO:	- 5 V
DC Current Gain hFE Max:	100 at 1 mA at 10 V
Length:	4.77 mm
Manufacturer:	Diodes Incorporated
Transistor Polarity:	PNP
Brand:	Diodes Incorporated
Product Category:	Bipolar Transistors - BJT
Maximum Operating Temperature:	+ 150 C
Width:	2.41 mm
Packaging:	Reel
Pd - Power Dissipation:	1 W
Height:	4.01 mm
Configuration:	Single
Mounting Style:	Through Hole
Maximum DC Collector Current:	0.2 A
Continuous Collector Current:	- 0.2 A
DC Collector/Base Gain hfe Min:	100 at 1 mA at 10 V, 100 at 50 mA at 10 V, 15 at 100 mA at 10 V
Series:	ZTX558
Factory Pack Quantity:	4000
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	- 400 V
ECCN	ECL99

Datasheet： ZTX558.pdf

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Stock code :	782275
Mfg name :	Diodes Incorporated
MPN :	ZTX558
Product description :	ZTX558 Series PNP 200 mA 400 V Silicon Planar Medium Power Transistor - TO-92-3

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