| VNS1NV04P-E | ||
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| Product description : SOIC 8/OMNIFET II fully autoprotected Power MOSFET | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Rds On - Drain-Source Resistance: | 250 mOhms |
|---|---|
| Product: | MOSFET Gate Drivers |
| Minimum Operating Temperature: | - 40 C |
| Package / Case: | SO-8 |
| Unit Weight: | 0.004395 oz |
| Shutdown: | Yes |
| Output Current: | 1.7 A |
| Number of Outputs: | 1 Output |
| Factory Pack Quantity: | 100 |
| RoHS: | Details |
| Product Category: | Gate Drivers |
| Maximum Turn-On Delay Time: | 200 ns |
| Type: | Low-Side Driver |
| Packaging: | Tube |
| Maximum Turn-Off Delay Time: | 1000 ns |
| Pd - Power Dissipation: | 8.3 W |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Fall Time: | 200 ns |
| Manufacturer: | STMicroelectronics |
| Series: | VNS1NV04P-E |
| Brand: | STMicroelectronics |
| Operating Supply Current: | 100 uA |
| Number of Drivers: | 1 Driver |
| Rise Time: | 170 ns |
| Maximum Operating Temperature: | + 150 C |
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- Replacement Products
- Associated Product
- P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
- Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
- Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
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