| UM6J1NTN | ||
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| 产品描述：
http://www.ameya360.com/product/760581
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| 标准包装：3000 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Minimum Operating Temperature: | - 55 C |
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| Packaging: | Reel |
| Technology: | Si |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Fall Time: | 40 ns |
| Forward Transconductance - Min: | 0.2 S |
| Series: | UM6J1N |
| Factory Pack Quantity: | 3000 |
| Brand: | ROHM Semiconductor |
| RoHS: | Details |
| Id - Continuous Drain Current: | 200 mA |
| Rise Time: | 5 ns |
| Maximum Operating Temperature: | + 150 C |
| FET Feature | Logic Level Gate |
| FET Type | 2 P-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Drain to Source Voltage (Vdss) | 30V |
| Power - Max | 150mW |
| Lead Free Status / RoHS Status | 1 |
| Base Part Number | *J1 |
| Rds On - Drain-Source Resistance: | 900 mOhms |
| Pd - Power Dissipation: | 150 mW |
| Package / Case: | UMT-6 |
| Vgs - Gate-Source Voltage: | 20 V |
| Number of Channels: | 2 Channel |
| Typical Turn-On Delay Time: | 8 ns |
| Manufacturer: | ROHM Semiconductor |
| Transistor Polarity: | P-Channel |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 30 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | - 30 V |
| Transistor Type: | 2 P-Channel |
| Operating Temperature | 150°C (TJ) |
| Categories | Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 200mA, 10V |
| Supplier Device Package | UMT6 |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Current - Continuous Drain (Id) @ 25°C | 200mA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| RoHS | Lead free / RoHS Compliant |
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