| SIS472DN-T1-GE3 | ||
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| 产品描述：
MOSFET N-CH 30V 20A 1212-8
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| 标准包装：1 | ||
| 数据手册： |
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| Rds On - Drain-Source Resistance: | 8.9 mOhms |
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| Number of Channels: | 1 Channel |
| Series: | SIS |
| Pd - Power Dissipation: | 28 W |
| Factory Pack Quantity: | 3000 |
| Brand: | Vishay Semiconductors |
| Tradename: | TrenchFET |
| Package / Case: | PowerPak1212-8 |
| Id - Continuous Drain Current: | 20 A |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Packaging: | Reel |
| Manufacturer: | Vishay |
| Minimum Operating Temperature: | - 55 C |
| Transistor Polarity: | N-Channel |
| Technology: | Si |
| Part # Aliases: | SIS472DN-GE3 |
| RoHS: | Details |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Transistor Type: | 1 N-Channel |
| Maximum Operating Temperature: | + 150 C |
| 数据手册： |
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