QSB363 specifications -Ameya360 electronic components purchase network


QSB363

ACTIVE EAR99
Product description : QSB363 Series 30 V 940 nm Subminiature Plastic Silicon Infrared Phototransistor
SPQ：1000
Datasheet : QSB363.pdf

Lens Color/Style:	Black
Product:	Phototransistors
Packaging:	Bulk
Collector-Emitter Breakdown Voltage:	30 V
Pd - Power Dissipation:	75 mW
Package / Case:	T-3/4
Unit Weight:	0.003175 oz
Fall Time:	15 us
Manufacturer:	Fairchild Semiconductor
Factory Pack Quantity:	1000
RoHS:	Details
Collector- Emitter Voltage VCEO Max:	30 V
Rise Time:	15 us
Maximum Operating Temperature:	+ 85 C
Collector-Emitter Saturation Voltage:	0.4 V
Width:	2.2 mm
Maximum On-State Collector Current:	1.5 mA
Minimum Operating Temperature:	- 40 C
Half Intensity Angle Degrees:	24 deg
Height:	3 mm
Mounting Style:	SMD/SMT
Length:	2.7 mm
Peak Wavelength:	940 nm
Brand:	Fairchild Semiconductor
Product Category:	Phototransistors
Dark Current:	100 nA
Wavelength:	940 nm
ECCN	EAR99

Datasheet： QSB363.pdf

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Stock code :	682489
Mfg name :	onsemi
MPN :	QSB363
Product description :	QSB363 Series 30 V 940 nm Subminiature Plastic Silicon Infrared Phototransistor

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