IRFB3207ZGPBF specifications -Ameya360 electronic components purchase network


IRFB3207ZGPBF

ACTIVE EAR99
Product description : Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB
SPQ：1
Datasheet : IRFB3207ZGPBF.pdf

Qg - Gate Charge:	120 nC
Packaging:	Tube
Manufacturer:	Infineon
Transistor Polarity:	N-Channel
Technology:	Si
RoHS:	Details
Product Category:	MOSFET
Vds - Drain-Source Breakdown Voltage:	75 V
Unit Weight:	0.211644 oz
Mounting Style:	Through Hole
Rds On - Drain-Source Resistance:	3.3 mOhms
Number of Channels:	1 Channel
Pd - Power Dissipation:	300 W
Factory Pack Quantity:	50
Brand:	Infineon Technologies
Package / Case:	TO-220-3
Id - Continuous Drain Current:	170 A
Vgs - Gate-Source Voltage:	20 V
Transistor Type:	1 N-Channel
ECCN	EAR99

Datasheet： IRFB3207ZGPBF.pdf

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Stock code :	68028
Mfg name :	Infineon Technologies
MPN :	IRFB3207ZGPBF
Product description :	Transistor: N-MOSFET; unipolar; 75V; 120A; 300W; TO220AB

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