| NJD35N04G | ||
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| 产品描述：
NJD Series 350 V 4 A NPN Darlington Power Transistor - TO-252-3
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| 标准包装：1 | ||
| 数据手册： |
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| Width: | 6.22 mm |
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| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO: | 700 V |
| DC Collector/Base Gain hfe Min: | 2000, 300 |
| Series: | NJD35N04 |
| Transistor Polarity: | NPN |
| Brand: | ON Semiconductor |
| Package / Case: | TO-252-3 (DPAK) |
| Collector- Emitter Voltage VCEO Max: | 350 V |
| Configuration: | Single |
| Maximum Operating Temperature: | + 150 C |
| Maximum DC Collector Current: | 4 A |
| Packaging: | Tube |
| Length: | 6.73 mm |
| Manufacturer: | ON Semiconductor |
| Minimum Operating Temperature: | - 65 C |
| Factory Pack Quantity: | 75 |
| RoHS: | Details |
| Product Category: | Darlington Transistors |
| Height: | 2.38 mm |
| Mounting Style: | SMD/SMT |
| ECCN | EAR99 |
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