NJD35N04G specifications -Ameya360 electronic components purchase network


NJD35N04G

ACTIVE EAR99
Product description : NJD Series 350 V 4 A NPN Darlington Power Transistor - TO-252-3
SPQ：1
Datasheet : NJD35N04G.pdf

Width:	6.22 mm
Emitter- Base Voltage VEBO:	5 V
Collector- Base Voltage VCBO:	700 V
DC Collector/Base Gain hfe Min:	2000, 300
Series:	NJD35N04
Transistor Polarity:	NPN
Brand:	ON Semiconductor
Package / Case:	TO-252-3 (DPAK)
Collector- Emitter Voltage VCEO Max:	350 V
Configuration:	Single
Maximum Operating Temperature:	+ 150 C
Maximum DC Collector Current:	4 A
Packaging:	Tube
Length:	6.73 mm
Manufacturer:	ON Semiconductor
Minimum Operating Temperature:	- 65 C
Factory Pack Quantity:	75
RoHS:	Details
Product Category:	Darlington Transistors
Height:	2.38 mm
Mounting Style:	SMD/SMT
ECCN	EAR99

Datasheet： NJD35N04G.pdf

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Stock code :	654201
Mfg name :	onsemi
MPN :	NJD35N04G
Product description :	NJD Series 350 V 4 A NPN Darlington Power Transistor - TO-252-3

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