| IRF7855TRPBF | ||
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| Product description : Single N-Channel 60V 9.4 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8 | ||
| SPQ：4000 | ||
| Datasheet : |
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| Minimum Operating Temperature: | - 55 C |
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| Rds On - Drain-Source Resistance: | 7.4 mOhms |
| Pd - Power Dissipation: | 2.5 W |
| Package / Case: | SOIC-8 |
| Configuration: | Single |
| Unit Weight: | 0.017870 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 8.7 ns |
| Manufacturer: | Infineon |
| Factory Pack Quantity: | 4000 |
| Typical Turn-Off Delay Time: | 16 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
| Qg - Gate Charge: | 26 nC |
| Packaging: | Reel |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 4.9 V |
| Vgs - Gate-Source Voltage: | 20 V |
| Mounting Style: | SMD/SMT |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 14 S |
| Transistor Polarity: | N-Channel |
| Brand: | Infineon Technologies |
| RoHS: | Details |
| Id - Continuous Drain Current: | 12 A |
| Rise Time: | 13 ns |
| Maximum Operating Temperature: | + 150 C |
| Datasheet： |
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- Replacement Products
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- P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
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