| IPP60R199CPXKSA1 | ||
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| Product description : Single N-Channel 650 V 199 mOhm 32 nC CoolMOS™ Power Mosfet - TO-220-3 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
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| Packaging: | Tube |
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| Qg - Gate Charge: | 43 nC |
| Pd - Power Dissipation: | 139 W |
| Tradename: | CoolMOS |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Mounting Style: | Through Hole |
| Fall Time: | 5 ns |
| Manufacturer: | Infineon |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | IPP60R199CP IPP60R199CPXK SP000084278 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 16 A |
| Rise Time: | 5 ns |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 180 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Package / Case: | TO-220-3 |
| Configuration: | 1 N-Channel |
| Unit Weight: | 0.211644 oz |
| Number of Channels: | 1 Channel |
| Typical Turn-On Delay Time: | 10 ns |
| Series: | CoolMOS CP |
| Factory Pack Quantity: | 500 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 50 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Transistor Type: | 1 N-Channel |
| ECCN | EAR99 |
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