| BSZ0506NSATMA1 | ||
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| Product description : BSZ0506NS Series 30 V 40 A 4.4 mOhm OptiMOS™5 Power-MOSFET - TSDSON-8 FL | ||
| SPQ：5000 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
- Documents
- Product reviews
| Packaging: | Reel |
|---|---|
| Qg - Gate Charge: | 11 nC |
| Pd - Power Dissipation: | 27 W |
| Package / Case: | TSDSON-8 |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Typical Turn-On Delay Time: | 2.3 ns |
| Manufacturer: | Infineon |
| Factory Pack Quantity: | 5000 |
| Brand: | Infineon Technologies |
| Typical Turn-Off Delay Time: | 13 ns |
| Product Category: | MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Maximum Operating Temperature: | + 150 C |
| Rds On - Drain-Source Resistance: | 4.4 mOhms |
| Minimum Operating Temperature: | - 55 C |
| Technology: | Si |
| Vgs th - Gate-Source Threshold Voltage: | 1.6 V |
| Vgs - Gate-Source Voltage: | +/- 20 V |
| Fall Time: | 2 ns |
| Forward Transconductance - Min: | 98 S |
| Transistor Polarity: | N-Channel |
| Channel Mode: | Enhancement |
| Part # Aliases: | BSZ0506NS SP001281636 |
| RoHS: | Details |
| Id - Continuous Drain Current: | 40 A |
| Rise Time: | 2.4 ns |
| ECCN | EAR99 |
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- Replacement Products
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- P2P:A direct drop-in replacement or second source option. Possible minor parametric differences. No change required in most designs.
- Functional Equivalent:A direct replacement or second source option. Possible major parametric differences. Changes may be required in some designs.
- Contain: The functions that one IC can achieve contain the functions that another IC can achieve.
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