STF25N60M2-EP
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Product description : TO 220 ISO FULL PAMOSFET 600V 0.188 OHM
SPQ:1
Datasheet : --
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Rds On - Drain-Source Resistance: 188 mOhms
Minimum Operating Temperature: - 55 C
Technology: Si
Vgs th - Gate-Source Threshold Voltage: 2 V
Vgs - Gate-Source Voltage: +/- 25 V
Unit Weight: 0.081130 oz
Fall Time: 16 ns
Manufacturer: STMicroelectronics
Factory Pack Quantity: 1000
Brand: STMicroelectronics
RoHS:  Details
Id - Continuous Drain Current: 18 A
Vds - Drain-Source Breakdown Voltage: 600 V
Qg - Gate Charge: 29 nC
Pd - Power Dissipation: 30 W
Package / Case: TO-220FP-3
Configuration: Single
Mounting Style: Through Hole
Number of Channels: 1 Channel
Typical Turn-On Delay Time: 15 ns
Transistor Polarity: N-Channel
Channel Mode: Enhancement
Typical Turn-Off Delay Time: 61 ns
Product Category: MOSFET
Rise Time: 10 ns
Maximum Operating Temperature: + 150 C
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