| NGTB45N60S1WG | ||
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| Product description : ON Semiconductor NGTB45N60S1WG, N沟道 IGBT 晶体管, 90 A, Vce=600 V, 1MHz, 3针 TO-247封装 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
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| Current - Collector Pulsed (Icm) | 180A |
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| Power - Max | 300W |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 72ns/132ns |
| Part Status | Active |
| Manufacturer | ON Semiconductor |
| Gate Charge | 125nC |
| Family | Transistors - IGBTs - Single |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 45A |
| Input Type | Standard |
| Package / Case | TO-247-3 |
| Test Condition | 400V, 45A, 10 Ohm, 15V |
| Supplier Device Package | TO-247-3 |
| Current - Collector (Ic) (Max) | 90A |
| Category | Discrete Semiconductor Products |
| Reverse Recovery Time (trr) | 70ns |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Mounting Type | Through Hole |
| Switching Energy | 1.25mJ (on), 530µJ (off) |
| Packaging | Tube |
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