| NGTB05N60R2DT4G | ||
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| Product description : ON Semiconductor NGTB05N60R2DT4G, N沟道 IGBT 晶体管, 16 A, Vce=600 V, 1MHz, 3针 DPAK封装 | ||
| SPQ：1 | ||
| Datasheet : -- |
- Specifications
- Product Attributes
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| Current - Collector Pulsed (Icm) | 20A |
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| Power - Max | 56W |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 16A |
| Category | Discrete Semiconductor Products |
| Reverse Recovery Time (trr) | 70ns |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Mounting Type | Surface Mount |
| Switching Energy | 188µJ (on), 60µJ (off) |
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Test Condition | 300V, 5A, 30 Ohm, 15V |
| Td (on/off) @ 25°C | 44ns/82ns |
| Part Status | Discontinued |
| Manufacturer | ON Semiconductor |
| Gate Charge | 30nC |
| Family | Transistors - IGBTs - Single |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 5A |
| Input Type | Standard |
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