KSC2690AYS
  • 量产中
  • TO-126-3
  • EAR99
产品描述:
KSC2690 Series 160 V 1.2 A NPN Epitaxial Silicon Transistor - TO-126
标准包装:2000
数据手册:
  • 规格参数
  • 产品特性
  • 技术文档
  • 产品评论
Package / Case TO-225AA, TO-126-3
Vce Saturation (Max) @ Ib, Ic 700mV @ 200mA, 1A
Transistor Type NPN
Current - Collector (Ic) (Max) 1.2A
Category Discrete Semiconductor Products
Voltage - Collector Emitter Breakdown (Max) 160V
Mounting Type Through Hole
Operating Temperature 150°C (TJ)
Packaging Bulk
Frequency - Transition 155MHz
Power - Max 1.2W
Supplier Device Package TO-126-3
Part Status Active
Manufacturer Fairchild Semiconductor
Family Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 5V
ECCN EAR99
数据手册:
登录之后就可发表评论

请输入下方图片中的验证码:

验证码